Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by ......

In this talk,we will review major progresses made over the last few years on the emerging and exciting field of nanophot......

设计了一种基于亚波长光栅的具有高集成度、高耦合效率的垂直光耦合器,在1.5~1.6 μm波长范围内实现了大于97%的耦合效率,且器件长......